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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM20P06PAPT CURRENT 13 Ampere FEATURE * Small flat package. ( TO-252A ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. .280 (7.10) .238 (6.05) .220 (5.59) .195 (4.95) TO-252A .094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45) * P-Channel Enhancement (1) (3) (2) .417 (10.6) .346 (8.80) CONSTRUCTION .261 (6.63) .213 (5.40) .035 (0.90) .025 (0.64) .102 (2.59) .078 (1.98) 1 Gate .024 (0.61) .016 (0.40) CIRCUIT 1G 3 D 2 Source 3 Drain( Heat Sink ) 2S Dimensions in inches and (millimeters) TO-252A Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM20P06PAPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous -60 V V 20 -13 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A -40 42 -55 to 150 -55 to 150 W C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 C/W 2006-02 RATING CHARACTERISTIC CURVES ( CHM20P06PAPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = -250 A VDS = -48 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V -60 -1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = -250 A VGS=-10V, ID=-4.5A VGS=-4.5V, ID=-3.9A -1 92 120 2 -3 105 V m 150 S Forward Transconductance VDS = -5V, ID = -3A SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=-30V, ID=-4.5A VGS=-10V V DD= -30V ID = -1.0A , VGS = -10 V RGEN= 6 21 3 6 11 9 46 22 29 nC ton 45 30 150 75 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) -13 -1.3 A V Drain-Source Diode Forward Voltage IS = -4.5A , VGS = 0 V (Note 2) |
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